Numerical Modeling of Experimentally Fabricated InAs/GaAs Quantum Rings
نویسندگان
چکیده
Single subband model for InAs/GaAs quantum rings (QR), with the electron effective mass depending on the confinement energy by the Kane formula is applied for numerical simulation of the capacitance-voltage (CV) spectroscopy experiments. Geometrical parameters chosen for the model are based on the fabrication process for InAs/GaAs QD/QR. The 3D confined energy problem is solved numerically by the finite element method. Obtained results for QR single energy levels are in a good agreement with the CV measurements. Evaluated magnitude of the electron effective mass is also correlates with the FIR spectroscopy data. These results are compared with the existing 2D model calculations. Theoretical estimates for the addition to the ground state energy of QR in the external magnetic field are given, and compared with experimental CV data.
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